Isc N-Channel MOSFET Transistor BUK453-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE. N-channel 60V, 3.0mOhm, 100A, 306W, standard level MOSFET. N-channel 60V, 2.0mOhm, 120A, 306W standard level MOSFET.
Type Designator: BUK7575-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 99 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 23 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
Package: TO220AB
BUK7575-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7575-100A Datasheet (PDF)
0.1. buk7575-100a buk7675-100a.pdf Size:314K _philips
BUK7575-100A;BUK7675-100ATrenchMOS standard level FETRev. 01 24 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-100A in SOT78 (TO-220AB)BUK7675-100A in SOT404 (D 2-PAK).2. Features TrenchMOS
6.1. buk7575-55a buk7675-55a.pdf Size:334K _philips
BUK7575-55A; BUK7675-55ATrenchMOS standard level FETRev. 01 8 December 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7575-55A in SOT78 (TO-220AB)BUK7675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
6.2. buk7575-55.pdf Size:53K _philips
Philips Semiconductors Product specification TrenchMOS transistor BUK7575-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 19.7 Afeatures very low on-stat
Datasheet: BUK753R1-40B, BUK753R4-30B, BUK7540-100A, BUK754R0-40C, BUK754R0-55B, BUK754R3-40B, BUK754R3-75C, BUK755R2-40B, IRF740, BUK7575-55A, BUK7604-40A, BUK7606-55A, BUK7606-55B, BUK7606-75B, BUK7607-30B, BUK7607-55B, BUK7608-40B.
LIST
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: BUK552-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: SOT78
BUK552-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK552-100A Datasheet (PDF)
0.1. buk552-100a-b 1.pdf Size:56K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK552 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
7.1. buk552-60a-b 1.pdf Size:55K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK552-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK552 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre
9.1. buk555-60a-b 1.pdf Size:55K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre
9.2. buk553-60a buk553-60b.pdf Size:91K _philips
9.3. buk553-100a-b 1.pdf Size:56K _philips
Marshall Mosfet
Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
9.4. buk555-200b.pdf Size:86K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain
9.5. buk555-100a-b 1.pdf Size:54K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
9.6. buk553-48c 1.pdf Size:69K _philips
Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 VThe device is intended for use in ID Drain current (
9.7. buk553-100b.pdf Size:60K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain
9.8. buk555-60h 1.pdf Size:69K _philips
Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 AAutomotive applications, Switched Ptot Tota
9.9. buk553-60a-b 1.pdf Size:54K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre
9.10. buk554-60h 1.pdf Size:63K _philips
Philips Semiconductors Product specification PowerMOS transistor BUK554-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 39 Aautomotive and general purpose Ptot Total po
9.11. buk556-60h 1.pdf Size:53K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 60 Aautomotive and general purpose Ptot Total p
9.12. buk555-200a-b 1.pdf Size:55K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain
9.13. buk556-60a 1.pdf Size:53K _philips
Philips Semiconductors Product Specification PowerMOS transistor BUK556-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 50 ASwitched Mode Power Supplies Ptot Total pow
9.14. buk555-100.pdf Size:234K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK555-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
Datasheet: BUK465-200A, BUK466-200A, BUK473-100A, BUK473-100B, BUK482-100A, BUK543-100A, BUK545-100A, BUK545-100B, IRFZ44V, BUK552-100B, BUK553-100A, BUK555-100A, BUK555-100B, BUK555-200A, BUK563-100A, BUK565-100A, BUK581-100A.
LIST
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100 Amp Transistor
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Mosfet 100a 100v